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CEP35P10/CEB35P10 CEF35P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -32 IDM -128
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
125 0.
CEP35P10 Datasheet
