Datasheet4U Logo Datasheet4U.com

CEP6056 - N-Channel MOSFET

Datasheet Summary

Features

  • 60V, 100A, RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📥 Download Datasheet

Datasheet preview – CEP6056

Datasheet Details

Part number CEP6056
Manufacturer CET
File Size 441.79 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP6056 Datasheet
Additional preview pages of the CEP6056 datasheet.

📁 Similar Datasheet

  • CEP6020P - Single P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
  • CEP6030AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6030LS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6031L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6031LS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6036 - N-Channel MOSFET (Chino-Excel Technology)
  • CEP603AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP603ALS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEP6042 - N-Channel MOSFET (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 100 IDM 360 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 100 0.
Published: |