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CEP70N06 - N-Channel MOSFET

Datasheet Summary

Features

  • 60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S.

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Datasheet preview – CEP70N06

Datasheet Details

Part number CEP70N06
Manufacturer CET
File Size 98.93 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP70N06 Datasheet
Additional preview pages of the CEP70N06 datasheet.

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Full PDF Text Transcription

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CEP70N06/CEB70N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60 Units V V A A W W/ C mJ A C ±20 70 280 150 1.
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