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CEP71A3/CEB71A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 70A,RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 10.5mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
70 210 65 0.
CEP71A3 Datasheet
