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CES2361 - P-Channel MOSFET

Features

  • -60V, -2.2A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 200mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S.

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Datasheet Details

Part number CES2361
Manufacturer CET
File Size 331.30 KB
Description P-Channel MOSFET
Datasheet download datasheet CES2361 Datasheet
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Full PDF Text Transcription

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CES2361 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -2.2A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 200mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -2.2 IDM -8.8 Maximum Power Dissipation PD 1.
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