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CEU1185 - N-Channel MOSFET

Datasheet Summary

Features

  • 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU1185
Manufacturer CET
File Size 576.68 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU1185 Datasheet
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Full PDF Text Transcription

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CED1185/CEU1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 800 ±30 3.4 13.6 83 0.7 Single Pulsed Avalanche Energy d EAS 331 Single Pulsed Avalanche Current d IAS 4.
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