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CEU12P10 - P-Channel MOSFET

Key Features

  • -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CEU12P10
Manufacturer CET
File Size 138.23 KB
Description P-Channel MOSFET
Datasheet download datasheet CEU12P10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -100 Units V V A A W W/ C C ±30 -9 -36 50 0.