Datasheet Summary
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRELIMINARY
Features
30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 5V.
-30V , -16A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead-free plating ; RoHS pliant. TO-252-4L package.
S1 G1 S2 G2
D1/D2
CEU SERIES TO-252-4L
D1/D2
G2...