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CEU3089 - Dual-Channel MOSFET

Key Features

  • 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 5V. -30V , -16A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead-free plating ; RoHS compliant. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2.

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Datasheet Details

Part number CEU3089
Manufacturer CET
File Size 578.19 KB
Description Dual-Channel MOSFET
Datasheet download datasheet CEU3089 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEU3089 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 5V. -30V , -16A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead-free plating ; RoHS compliant. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 30 30 VGS ±20 ±20 ID d 25 -16 IDM 100 -56 10.4 PD 0.