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CEU3099 - Dual Enhancement Mode Field Effect Transistor

Key Features

  • 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. -30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2.

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Datasheet Details

Part number CEU3099
Manufacturer CET
File Size 957.11 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEU3099 Datasheet

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Full PDF Text Transcription (Reference)

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CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. -30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e@ TC = 25 C Drain Current-Continuous e@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 30 30 VGS ±20 ±20 ID e 26 -19 ID e 18 -13 IDM 104 -76 12.