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CED6086L/CEU6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 50.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e
VDS VGS ID
IDM
PD
EAS IAS
60
±20
50.5
36
202 65 0.
CEU6086L Datasheet
