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CEU740A - N-Channel MOSFET

Key Features

  • 400V, 9A, RDS(ON) = 0.55Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU740A
Manufacturer CET
File Size 413.86 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU740A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CED740A/CEU740A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 9A, RDS(ON) = 0.55Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 400 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 9 6.3 Drain Current-Pulsed a IDM 36 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.