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CEU840A - N-Channel MOSFET

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Features

  • 500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU840A
Manufacturer CET
File Size 395.20 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 7.5 4.7 Drain Current-Pulsed a IDM 30 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.
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