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CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
VDS VGS
ID
40
±20
80
56
Drain Current-Pulsed a
IDM 320
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
57.7 0.
CEU84A4 Datasheet
