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CEP75N06/CEB75N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 60
VGS ±20
87 ID 61
IDM 348 200
PD 1.
P75N06 Datasheet
