P75N06 Description
PJP75N06 60V N-Channel Enhancement Mode MOSFET.
P75N06 Key Features
- RDS(ON), VGS@10V,IDS@30A=13mΩ
- RDS(ON), VGS@4.5V,IDS@30A=18mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for Converters and Power Motor Controls
- Fully Characterized Avalanche Voltage and Current
- Pb free product : 99% Sn above can meet RoHS environment
- Case: TO-220 Molded Plastic
- Terminals : Solderable per MIL-STD-750D,Method 1036.3
- Marking : P75N06