P75N06 Datasheet | PanJit Semiconductor

PJP75N06 60V N-Channel Enhancement Mode MOSFET Features - RDS(ON), VGS@10V,IDS@30A=13mΩ - RDS(ON), VGS@4.5V,IDS@30A=18mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for Converters and Power Motor Controls - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: TO-220 Molded Plastic - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : P75N06 Drain Gate Source PIN Assignment 1. Gate 2. Drain 3. Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) Drain-Source Voltage PA RA ME TE R Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5m H Junction-to-Case Thermal Resistance TA= 2 5 OC TA= 7 5 OC Junction-to Ambient Thermal Resistance(PCB mounted)2 S ym b o l V DS V GS ID ID M PD TJ,TSTG E AS RθJC...