P75N06 - PJP75N06

Datasheet Summary

Features

RDS(ON), VGS@10V,IDS@30A=13mΩ.
RDS(ON), VGS@4.5V,IDS@30A=18mΩ.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Specially Designed for Converters and Power Motor Controls.
Fully Characterized Avalanche Voltage and Current.
Pb free product : 99% Sn above can meet RoHS environment substance directive request.

Pan Jit International

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Datasheet Details

Part number	P75N06
Manufacturer	Pan Jit International
File Size	134.32 KB
Description	PJP75N06
Datasheet	P75N06 Datasheet
Additional preview pages of the P75N06 datasheet.

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Full PDF Text Transcription

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PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : P75N06 Drain Gate Source PIN Assignment 1. Gate 2. Drain 3.

Published: Jul 17, 2016 |