2SC2310 Datasheet | CHINA BASE

NPN Silicon Epitaxial Planar Transistor low frequency, low noise amplifier. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 m A Group Current Gain Collector Base Cutoff Current at VCB = 18 V Emitter Base Cutoff Current at VEB = 2 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 m A Emitter Base Breakdown Voltage at IC = 10 µA Collector Emitter Saturation Voltage at IC = 10 m A, IB = 1 m A Base Emitter Voltage at IC = 2 m A, VCE = 12 V Transition Frequency at VCE = 12 V, IC = 2 m A Collector Output Capacitance at...