CHINA BASE 2SC2310
NPN Silicon Epitaxial Planar Transistor
| Part No. | 2SC2310 |
|---|---|
| Datasheet | 2SC2310 Download |
| Manufacturer | CHINA BASE |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Group Current Gain Collector Base Cutoff Current at VCB = 18 V Emitter Base Cutoff Current at VEB = 2 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IC = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Voltage at IC = 2 mA, VCE = 12 V Transition Frequency at VCE = 12 V, IC = 2 mA Collector Output Capacitance at VC
