Semtech Corporation 2SC2310
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS G S P FORM A IS AVAILABLE Value 55 50 5 100 100 200 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC2310 Characteristics at Tamb=25 OC DC Current Gain at VCE=12V, IC=2mA Current Gain Group B C Symbol hFE hFE Min. 100 160 Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Satura