MMBD6050
MMBD6050 is Silicon Epitaxial Planar Switching Diode manufactured by CHINA BASE.
Features
- Small package
- Low forward voltage
- Fast reverse recovery time
- Small total capacitance
Applications
- Ultra high speed switching application
Marking Code: 5D SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs)
Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VR IF IFSM Ptot Tj Tstg
Value 70 200 4 350 150
- 55 to + 150
Unit V m A A m W OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 1 m A at IF = 100 m A
Reverse Current at VR = 50 V
Reverse Breakdown Voltage at IR = 100 µA
Diode Capacitance at VR = 0, f = 1 MHz
Reverse Recovery Time at IF = IR = 10 m A, IR(REC) = 1 m A
Symbol VF
IR V(BR)R
CT trr
Min. 0.55 0.85
- 70
- -
Max. 0.7 1.1 100
- 2.5
Unit V n A V p F ns
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6/3/2011
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