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MMBD6050 Silicon Epitaxial Planar Switching Diode
Features
• Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications
• Ultra high speed switching application
3
12
Marking Code: 5D SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs)
Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VR IF IFSM Ptot Tj Tstg
Value 70 200 4 350 150
- 55 to + 150
Unit V mA A
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 1 mA at IF = 100 mA
Reverse Current at VR = 50 V
Reverse Breakdown Voltage at IR = 100 µA
Diode Capacitance at VR = 0, f = 1 MHz
Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA
Sy
MMBD6050 Datasheet
