CHINA BASE MMBD6050
Silicon Epitaxial Planar Switching Diode
| Part No. | MMBD6050 |
|---|---|
| Datasheet | MMBD6050 Download |
| Manufacturer | CHINA BASE |
| Description | Silicon Epitaxial Planar Switching Diode |
| Buy | Stock & Price |
FEATURES
● Small package● Low forward voltage
● Fast reverse recovery time
● Small total capacitance
APPLICATIONS
● Ultra high speed switching application 3 12 Marking Code: 5D SOT-23 Plastic PackageABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VR IF IFSM Ptot Tj Tstg Value 70 200 4 350 150 - 55 to + 150 Unit V mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol VF IR V(BR)R CT trr Min. 0.55 0.85 - 70 - - Max. 0.7 1.1 100 - 2.5 4 Unit V nA V pF ns Page 1 of 3 6/3/2011 Page 2 of 3 6/3/2011 PACKAGE OUTLINE Plastic surface mounted packag
