• Part: MMBD6050
  • Description: Silicon Epitaxial Planar Switching Diode
  • Category: Diode
  • Manufacturer: CHINA BASE
  • Size: 235.70 KB
Download MMBD6050 Datasheet PDF
CHINA BASE
MMBD6050
MMBD6050 is Silicon Epitaxial Planar Switching Diode manufactured by CHINA BASE.
Features - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance Applications - Ultra high speed switching application Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VR IF IFSM Ptot Tj Tstg Value 70 200 4 350 150 - 55 to + 150 Unit V m A A m W OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 m A at IF = 100 m A Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 m A, IR(REC) = 1 m A Symbol VF IR V(BR)R CT trr Min. 0.55 0.85 - 70 - - Max. 0.7 1.1 100 - 2.5 Unit V n A V p F ns Page 1 of 3 6/3/2011 Page 2 of...