CHINA BASE MMBT5087
PNP Silicon Epitaxial Planar Transistor
| Part No. | MMBT5087 |
|---|---|
| Datasheet | MMBT5087 Download |
| Manufacturer | CHINA BASE |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 100 µA at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA Collector Cutoff Current at -VCB = 35 V Emitter Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 1 mA Transition Frequency at -VCE = 5 V, IE = 0.5 mA, f = 100 MHz Collector Base Capacitance at -VCE = 5 V, IE = 0 , f = 100 KHz Page 1 of 3 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Symbol Value Unit -VCBO 50 V -VCEO 50 V -VEBO 3 V -IC 100 mA -ICM 200 mA Ptot 200 mW Tj 150 OC TS - 55 to + 150 OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min.
