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MMBT5087
PNP Silicon Epitaxial Planar Transistor
for general purpose application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 5 V, -IC = 100 µA at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA Collector Cutoff Current at -VCB = 35 V Emitter Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 1 mA Transition Frequency
MMBT5087 Datasheet
