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MMBT5087L
Low Noise Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
−50
Vdc
Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCBO VEBO
IC
−50 Vdc −3.0 Vdc −50 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300 mW 2.
MMBT5087L Datasheet
