Datasheet4U Logo Datasheet4U.com

MMBT5087LT1 - Low Noise Transistor

Key Features

  • nimize the thermal stress to which the devices are subjected.
  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT5087L Low Noise Transistor ON Semiconductor
MMBT5087 PNP (LOW NOISE TRANSISTOR) Samsung
MMBT5087 PNP General Purpose Amplifier Fairchild
MMBT5087 PNP General Purpose Amplifier ON Semiconductor
MMBT5087 PNP Silicon Epitaxial Planar Transistor SEMTECH

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMBT5088LT1 Low Noise Transistors
MMBT5089LT1 Low Noise Transistors
MMBT5401LT1 High Voltage Transistor
MMBT5550 HIGH VOLTAGE TRANSISTOR
MMBT5550LT1 High Voltage Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5087LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –50 –50 –3.0 –50 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT5087LT1 = 2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.