MMBT5087 Datasheet and Specifications PDF

The MMBT5087 is a PNP General Purpose Amplifier.

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Part NumberMMBT5087 Datasheet
Manufactureronsemi
Overview 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents. ted Symbol Parameter Test Condition Min. Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 ICEO Collector Cutoff Current VCB = -10V, IE = 0 VCB = -35V, IE = 0 ICBO Emitter Cutoff.
Part NumberMMBT5087 Datasheet
DescriptionPNP (LOW NOISE TRANSISTOR)
ManufacturerSamsung Semiconductor
Overview . .
Part NumberMMBT5087 Datasheet
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerCHINA BASE
Overview MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage . V -VCEO 50 V -VEBO 3 V -IC 100 mA -ICM 200 mA Ptot 200 mW Tj 150 OC TS - 55 to + 150 OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min. 250 250 250 50 50 3 40 - Max. 800 50 50 - 0.3 0.85 4 Unit nA nA V V V V V MHz pF 6/3/2011 P.
Part NumberMMBT5087 Datasheet
DescriptionPNP Transistors
ManufacturerKexin Semiconductor
Overview SMD Type Transistors PNP Transistors MMBT5087 (KMBT5087) ■ Features ● Collector Current Capability IC=-100mA ● Collector Emitter Voltage VCEO=-50V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1.
* Collector Current Capability IC=-100mA
* Collector Emitter Voltage VCEO=-50V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1
* Absolute Maximum .