Datasheet Details
| Part number | D20N06E |
|---|---|
| Manufacturer | CHONGQING PINGYANG ELECTRONICS |
| File Size | 461.93 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | D20N06E-CHONGQINGPINGYANGELECTRONICS.pdf |
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Overview: D20N06E FEATURE 20 Amps,55 Volts N-CHANNEL Power MOSFET DFN5*6 20A,55V,RDS(ON)MAX=15mΩVGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability APPLICATION High.
| Part number | D20N06E |
|---|---|
| Manufacturer | CHONGQING PINGYANG ELECTRONICS |
| File Size | 461.93 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | D20N06E-CHONGQINGPINGYANGELECTRONICS.pdf |
|
|
|
The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Rang
| Part Number | Description |
|---|---|
| D20N10E | N-CHANNEL Power MOSFET |