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D20N06E - N-CHANNEL Power MOSFET

General Description

gate charge for most of the synchronous buck converter applications.

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Datasheet Details

Part number D20N06E
Manufacturer CHONGQING PINGYANG ELECTRONICS
File Size 461.93 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet D20N06E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D20N06E FEATURE 20 Amps,55 Volts N-CHANNEL Power MOSFET DFN5*6  20A,55V,RDS(ON)MAX=15mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  LCD/LED back light GENERAL DESCRIPTION The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.