Datasheet Details
| Part number | D20N10E |
|---|---|
| Manufacturer | CHONGQING PINGYANG ELECTRONICS |
| File Size | 466.11 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | D20N10E-CHONGQINGPINGYANGELECTRONICS.pdf |
|
|
Overview: D20N10E FEATURE 20 Amps, 95Volts N-CHANNEL Power MOSFET DFN5*6 20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability APPLICATION High.
| Part number | D20N10E |
|---|---|
| Manufacturer | CHONGQING PINGYANG ELECTRONICS |
| File Size | 466.11 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | D20N10E-CHONGQINGPINGYANGELECTRONICS.pdf |
|
|
|
The D20N10E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The D20N10E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range
| Part Number | Description |
|---|---|
| D20N06E | N-CHANNEL Power MOSFET |