• Part: CHT-NEPTUNE-1210
  • Description: 1200V/10A Silicon Carbide MOSFET
  • Manufacturer: CISSOID
  • Size: 882.04 KB
Download CHT-NEPTUNE-1210 Datasheet PDF
CHT-NEPTUNE-1210 page 2
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CHT-NEPTUNE-1210 page 3
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Datasheet Summary

The Leader in High Temperature Semiconductor Solutions CHT-NEPTUNE-1210 PRELIMINARY DATASHEET Version: 4.4 (see note 1) High Temperature 1200V/10A Silicon Carbide MOSFET General description CHT-NEPTUNE-1210 is a High Temperature, High Voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package - the metal case being electrically isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A. The device Features a body diode that can be used as freewheeling diode. This new version D (PLA8543D), replacing...