M02N601D1
M02N601D1 is Silicon N-Channel Power MOSFET manufactured by Chip Integration Technology.
600V N-Channel General Purpose Switching Device Applications
- Features
- 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V.
- 100% avalanche, EAS tested.
- Suffix "G" indicates Halogen-free part, ex.M02N601D1G.
- Outline
TO-251
0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8)
0.060(1.52) 0.058(1.48)
0.098(2.5)
0.083(2.1) 0.024(0.6)
0.016(0.4)
0.193(4.9) 0.181(4.6)
0.217(5.52) 0.216(5.48)
0.583(14.80) 0.559(14.20)
0.209(5.3) 0.193(4.9)
- Mechanical data
- Epoxy:UL94-V0 rated flame retardant
- Case : JEDEC TO-251 molded plastic body over passivated chip
- Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
0.035(0.90) 0.020(0.50)
0.297(7.55) 0.293(7.45)
0.035(0...
