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M02N601D1 - Silicon N-Channel Power MOSFET

Features

  • s.
  • 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V.
  • 100% avalanche, EAS tested.
  • Suffix "G" indicates Halogen-free part, ex. M02N601D1G.
  • Outline TO-251 0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8) 0.060(1.52) 0.058(1.48) 0.098(2.5) 0.083(2.1) 0.024(0.6) 0.016(0.4) 0.193(4.9) 0.181(4.6) 0.217(5.52) 0.216(5.48) 0.583(14.80) 0.559(14.20) 0.209(5.3) 0.193(4.9).
  • Mechanical data.
  • Epoxy:UL94-V0 rated flame retardant.
  • Case : JEDEC TO-251 molded p.

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Datasheet Details

Part number M02N601D1
Manufacturer CITC
File Size 122.49 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet M02N601D1 Datasheet
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Full PDF Text Transcription

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M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. • 100% avalanche, EAS tested. • Suffix "G" indicates Halogen-free part, ex.M02N601D1G. ■ Outline TO-251 0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8) 0.060(1.52) 0.058(1.48) 0.098(2.5) 0.083(2.1) 0.024(0.6) 0.016(0.4) 0.193(4.9) 0.181(4.6) 0.217(5.52) 0.216(5.48) 0.583(14.80) 0.559(14.20) 0.209(5.3) 0.193(4.9) ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. GDS 0.035(0.90) 0.020(0.50) 0.297(7.55) 0.293(7.45) 0.035(0.90) 0.020(0.50) 0.091(2.30)TYP. 0.031(0.80) 0.016(0.40) 0.026(0.65) 0.014(0.
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