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Chip Integration Technology Corporation
MHF04N60CT
Silicon N-Channel Power MOSFET
Main Product Characteristics
ID VDSS PD(TC=25oC) RDS(ON)Typ
4A 600V 30W 1.8Ω
■ Features
• Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:14.5nC) • Low reverse transfer capacitances.(Typical:8.5pF) • 100% single pulse avalanche energy test.
■ Application
• Power switch circuit of adaptor and charger.
■ Outline
TO-220F
123
1.Gate 2.Drain 3.Source
Drain
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-220F molded plastic body over
passivated chip • Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
MHF04N60CT Datasheet
