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MHF10N60CT
600V Silicon N-Channel Power MOSFET
■ Features
• Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capacitances. • 100% single pulse avalanche energy test.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220F molded plastic body. • Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026. • Polarity: As marked. • Mounting Position : Any. • Weight : Approximated 2.25 gram.
Gate
■ Outline
TO-220F
0.409(10.40) 0.378(9.60)
0.189(4.80) 0.173(4.40)
0.114(2.90) 0.098(2.50)
Drain Source
0.638(16.20) 0.606(15.40)
0.551(14.0) 0.472(12.0)
0.150(3.80) 0.134(3.40)
00.1.11380(3(3.0.3) 0) Marking code
GDS 0.056(1.42) 0.044(1.12)
0.035(0.90) 0.028(0.70) 0.108(2.74) 0.092(2.34)
0.102(2.60) 0.082(2.10)
0.022(0.
MHF10N60CT Datasheet
