Datasheet4U Logo Datasheet4U.com

MJU03N60CT - Power MOSFET

Description

TO-251 Preliminary Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Tempera

Features

  • s.
  • High speed power switching.
  • 100% UIS tested, 100% Rg tested.
  • Εnhanced avalanche ruggedness.
  • Lead free, halogen free.

📥 Download Datasheet

Datasheet Details

Part number MJU03N60CT
Manufacturer CITC
File Size 260.85 KB
Description Power MOSFET
Datasheet download datasheet MJU03N60CT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by CITC

Part Number Description
MJU02N70CT Power MOSFET
MJU05N70 Power MOSFET
MJU07N60CT Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Chip Integration Technology Corporation MJU03N60CT 600V Super Junction Power MOSFET ■ Features • High speed power switching • 100% UIS tested, 100% Rg tested • Εnhanced avalanche ruggedness • Lead free, halogen free ■ Application • SMPS • Ηard switching and high speed circuit • LED lighting • Flyback ■ Main product characteristics VDS RDS(on),max ID 600V 1.35Ω 3A ■ Pin Description TO-251 Preliminary ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature L =4.
Published: |