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MJU05N70 - Power MOSFET

Description

TO-251 Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature L =8.0m

Features

  • s.
  • High speed power switching.
  • 100% UIS tested, 100% Rg tested.
  • Εnhanced avalanche ruggedness.
  • Lead free, halogen free.

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Datasheet Details

Part number MJU05N70
Manufacturer CITC
File Size 4.95 MB
Description Power MOSFET
Datasheet download datasheet MJU05N70 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Chip Integration Technology Corporation MJU05N70 700V Super Junction Power MOSFET ■ Features • High speed power switching • 100% UIS tested, 100% Rg tested • Εnhanced avalanche ruggedness • Lead free, halogen free ■ Application • SMPS • Ηard switching and high speed circuit • LED lighting • Flyback ■ Main product characteristics VDS RDS(on),max ID 700V 850mΩ 5A ■ Pin Description TO-251 ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature L =8.
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