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MJU07N60CT - Power MOSFET

Description

TO-251 Preliminary Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Tempera

Features

  • s.
  • High speed power switching.
  • 100% UIS tested, 100% Rg tested.
  • Εnhanced avalanche ruggedness.
  • Lead free, halogen free.

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Datasheet Details

Part number MJU07N60CT
Manufacturer CITC
File Size 287.55 KB
Description Power MOSFET
Datasheet download datasheet MJU07N60CT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Chip Integration Technology Corporation MJU07N60CT 600V Super Junction Power MOSFET ■ Features • High speed power switching • 100% UIS tested, 100% Rg tested • Εnhanced avalanche ruggedness • Lead free, halogen free ■ Application • SMPS • Ηard switching and high speed circuit • LED lighting • Flyback ■ Main product characteristics VDS RDS(on),max ID 600V 580mΩ 7A ■ Pin Description TO-251 Preliminary ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature L =4.
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