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MSM30N03G - N-Channel Enhancement Mode MOSFET

General Description

The MSM30N03G uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Green Device Available 「 Low Miller Charge 「 100% EAS and 100% Rg Guaranteed Package Dimensions Package Dimensions.

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Datasheet Details

Part number MSM30N03G
Manufacturer CITC
File Size 542.59 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSM30N03G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSM30N03G Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Low On-Resistance □ Low Input Capacitance □ Green Device Available 「 Low Miller Charge 「 100% EAS and 100% Rg Guaranteed Package Dimensions Package Dimensions Description: The MSM30N03G uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The MSM30N03G meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved.