MMG-202543-M5 Datasheet | CML

FEATURES - Psat: +44d Bm - PAE: >50% - Power Gain @ Psat: 24d B - Small Signal Gain: 27d B - QNF Package: 5.0 mm x 5.0 mm APPLICATIONS - Wireless Mesh Networks - Point-to-Point Microwave Data Links - Military Wireless munications - Telemetry - Avionics Testing conditions: Pulsed RF signal with 1ms pulse width and 20% duty cycle DESCRIPTION The MMG-202543-M5 is a high-performance Gallium Nitride (Ga N) MMIC power amplifier in a QFN package with high reliability. The MMG-202543-M5 provides >20W of saturated output power, >50% power-added efficiency, and 24 d B of large-signal gain between 2.0 GHz and 2.5 GHz. Both input and output are matched to 50 ohms. Ideal applications include wireless mesh networks, Point-to-point wireless data links, military wireless munications, telemetry, and avionics. FUNCTIONAL DIAGRAM TYPICAL RF PERFORMANCE VDD1 = 12V, VDD2 = 28V, IDQ1 = 34m A, IDQ2 = 100m A, VG1 = -2.45V, VG2 = -2.45V, Ta = 25 ºC, Z0 = 50ohm PARAMETER Frequency Range Gain Gain Flatness Input Return Loss Output Return Loss Output Psat (2.0 - 2.3 GHz) Output Psat (2.4 - 2.5 GHz) PAE (2.0 - 2.3 GHz) PAE (2.4 - 2.5 GHz) EVM @ Pout of 37d Bm or below Operating Current Range Thermal Resistance UNITS GHz d B +/-d B d B d B d Bm d Bm % % % m A ºC/W TYPICAL - 2.5 27 0.7 7 12 45 44 48 65 <5 See plot on page 2 4 ABSOLUTE MAXIMUM RATINGS Ta=25 ºC SYMBOL PARAMETERS UNITS Vds Vgs Idd1 Idd2 Ig1 Ig2 Pdiss Pin max Tch Tstg Drain to Source Voltage Gate to Source Voltage Drain Current of 1st Stage Drain Current of 2nd Stage Gate Current of 1st Stage Gate Current of 2nd Stage DC Power Dissipation Max RF Input Power Channel Temperature Storage Temperature V V m A m A m A m A W d Bm ºC...