• Part: MMG-446040-M5
  • Description: GaN Power Amplifier
  • Manufacturer: CML
  • Size: 1.16 MB
Download MMG-446040-M5 Datasheet PDF
CML
MMG-446040-M5
MMG-446040-M5 is GaN Power Amplifier manufactured by CML.
FEATURES - Psat: +40d Bm - PAE: 40% - Power Gain @ Psat: 27d B - Small Signal Gain: 30d B - QFN Package: 5.0 mm x 5.0 mm Testing conditions: Pulsed RF signal with 1ms pulse width and 20% duty cycle DESCRIPTION The MMG-446040-M5 is a high-performance gallium nitride (Ga N) MMIC power amplifier. The MMG-446040-M5 provides >10W of saturated output power, 40% poweradded efficiency, and 27 d B of large-signal gain between 4.4 GHz and 6.0 GHz. Both input and output are matched to 50 ohms. Ideal applications include wireless mesh networks, Point-to-point wireless data links, military wireless munications, telemetry, and avionics. TYPICAL RF PERFORMANCE VDD1 = 15V, VDD2 = 15V, VDD3 = 28V, IDQ1 = 15m A, IDQ2 = 30m A, IDQ3 = 58m A, VG1 = -2.4V, VG2 = -2.41V, VG3 = -2.43V, Ta = 25 ºC, Z0 = 50ohm PARAMETER UNITS TYPICAL Frequency Range Gain Gain Flatness Input Return Loss Output Return Loss Output Psat PAE EVM @ Pout of 32d Bm or below Operating Current Range Thermal Resistance GHz d B +/-d B d B d B d Bm % % m A ºC/W - 6.0 30 0.8 7.0 15 40 > 37 <6 See plot on page 2 3.5 APPLICATIONS - Wireless Mesh Networks - Point-to-Point Microwave Data Links - Military Wireless munications - Telemetry - Avionics FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Ta=25 ºC SYMBOL PARAMETERS UNITS Vds Drain to Source Voltage Vgs Gate to Source Voltage Idd1 Drain Current of 1st Stage Idd2 Drain Current of 2nd...