CRG50T60AH3HD - Silicon FS Trench IGBT

Datasheet Summary

Description

Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Features

FS Trench Technology, Positive temperature coefficient.
Low saturation voltage： VCE(sat),TYP=1.8V @IC=50A,VGE=15V ；.

CR Micro

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Datasheet Details

Part number	CRG50T60AH3HD
Manufacturer	CR Micro
File Size	1.08 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG50T60AH3HD Datasheet
Additional preview pages of the CRG50T60AH3HD datasheet.

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Full PDF Text Transcription

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Silicon FS Trench IGBT CRG50T60AH3HD General Description： Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.8V @IC=50A,VGE=15V ； Applications ● Welding ● Solar Inverter ● UPS VCES 650 V IC 50 A Ptot （TC=25℃） 40 W VCE(sat) 1.8 V TO-3PH GCE Package Parameters Type CRG50T60AH3HD Marking G50T60AH3HD Package TO-3PH Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Published: Jun 12, 2025 |