CRG50T60AK3HD - Silicon FS Trench IGBT

CR Micro

General Description

Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

FS Trench Technology, Positive temperature coefficient.
Low saturation voltage： VCE(sat),TYP=1.8V @IC=50A,VGE=15V ； VCES 650 V IC 50 A Ptot （TC=25℃） 500 W VCE(sat) 1.8 V TO-247.

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CRG50T60AK3HD silicon fs trench igbt by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRG50T60AK3HD
Manufacturer	CR Micro
File Size	1.21 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG50T60AK3HD Datasheet

Other Datasheets by CR Micro

Part Number	Description
CRG50T60AK3HD	IGBT
CRG50T60AK3H	IGBT
CRG50T60AK3SD	Silicon FS Trench IGBT
CRG50T60AH3HD	Silicon FS Trench IGBT
CRG50T60AN3H	IGBT
CRG50T60AN3HD	IGBT
CRG50T65AK5HD	IGBT
CRG50T65AK5SD	FS IGBT
CRG50T65BK5SD	IGBT
CRG50T65BK5SDQ	IGBT

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Silicon FS Trench IGBT CRG50T60AK3HD General Description： Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.8V @IC=50A,VGE=15V ； VCES 650 V IC 50 A Ptot （TC=25℃） 500 W VCE(sat) 1.8 V TO-247 Applications ● Welding ● Solar Inverter ● UPS Package Parameters Type CRG50T60AK3HD Marking G50T60AK3HD Package TO-247 Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.