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CRJD450N80G2
SJMOS N-MOSFET 800V, 350mΩ, 10A
Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM
Applications • LED/LCD/PDP TV and monitor Lighting • Solar/Renewable/UPS-Micro Inverter System • Charger • Power Supply
Product Summary
VDS RDS(on)_typ ID
800V 350mΩ 10A
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part # CRJD450N80G2
Marking J450N80G2
Package TO-252
Packing Tape&Reel
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current 1)
TC = 25°C TC = 100°C Pulsed drain current 2) (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30mH, Rg=30Ω) MOSFET dv/dt ruggedness Gate-Source voltage Power dissipation (TC = 2
CRJD450N80G2 Datasheet
