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CRJMH74M65EMAQ
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N-channel Half-bridge
topology Power MOSFET
650V, 41mΩ, 62A
Features • AQG 324 qualified • Half bridge power module • 650V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper(DBC) substrate • Low thermal resistance Applications • Switching applications
Product Summary
VDS
650V
RDS(on)_typ ID
41mΩ 62A
100% DVDS Tested 100% Avalanche Tested
5 4 3 2 1
6 7 8
CRJMH74M65EMAQ
8 7 6
Package Marking and Ordering Information
Part #
Marking
CRJMH74M65EMAQ CRJMH74M65EMAQ
Package MSOP8
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current 1)
TC = 25°C TC = 100°C Pulsed drain current 2) (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30mH, Rg=30Ω)