CRJQ41N65G2F Datasheet | CR Micro

Features - CRM(CQ) Super_Junction technology - Much lower Ron- A performance for On-state efficiency - Much lower FOM for fast switching efficiency Product Summary VDS RDS(on)_typ ID 650V 43mΩ 70A Applications - LED/LCD/PDP TV and monitor Lighting - Solar/Renewable/UPS-Micro Inverter System - Charger - Power Supply 100% DVDS Tested 100% Avalanche Tested CRJQ41N65G2F Package Marking and Ordering Information Part # CRJQ41N65G2F Marking - Package TO-247-3L Packing Tube Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30m H, Rg=30Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Reel Size N/A Tape Width N/A Qty 25pcs Symbol VDS Value 650 ID pulse EAS VGS Ptot Tj , T stg 70 44 281 960 ±30 472 -55...+150 Unit V A m J V W °C ©China Resources Microelectronics (Chongqing) Limited Page 1 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 43mΩ, 70A Thermal Resistance Parameter Symbol...