CRJQ41N65GCP Datasheet | CR Micro

Features - CRM(CQ) Super_Junction technology - Much lower Ron- A performance for On-state efficiency - Better efficiency due to very low FOM - Ultra-fast body diode - Qualified for industrial grade applications according to JEDEC Applications - LED/LCD/PDP TV and monitor Lighting - Solar/Renewable/UPS-Micro Inverter System - Charger - Power Supply Product Summary VDS RDS(on)_typ ID 650V 42mΩ 74A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRJQ41N65GCP Marking CRJQ41N65GCP Package TO-247-3L Packing Tube Reel Size N/A Absolute Maximum Ratings(at Tj = 25 °C, unless otherwise specified) Parameter Symbol Drain-source voltage Continuous drain current 1) TC = 25°C TC = 100°C Pulsed drain current 2) (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30m H) VDS ID ID pulse EAS MOSFET dv/dt ruggedness dv/dt Gate-Source voltage Power dissipation (TC = 25°C) Continuous diode forward current(TC = 25°C) Diode pulse current 2) (TC = 25°C) Recovery diode dv/dt 3) VGS Ptot IS IS pulse dv/dt Maximum diode mutation speed Operating junction and storage temperature di F/dt Tj , T stg 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Tape Width N/A Qty 25/30pcs Value 650 74 47 296 1500 50 ±30 687 74 296 50 900 -55...+150 Unit...