CRJQ80N65GC Datasheet | CR Micro

Features - CRM(CQ) Super_Junction technology - Much lower Ron- A performance for On-state efficiency - Much lower FOM for fast switching efficiency Applications - LED/LCD/PDP TV and monitor Lighting - Solar/Renewable/UPS-Micro Inverter System - Charger - Power Supply Product Summary VDS RDS(on)_typ ID 650V 67.75mΩ 43A 100% Avalanche Tested Package Marking and Ordering Information Part # CRJQ80N65GC Marking - Package TO-247 Packing Tube Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=60m H, Rg=30Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Reel Size N/A Tape Width N/A Qty 30pcs Symbol VDS Value 650 ID pulse EAS VGS Ptot Tj , T stg 43 33.7 172 750 ±30 470 -55...+150 Unit V A m J V W °C ©China Resources Microelectronics (Chongqing) Limited Page 1 华润微电子(重庆)有限公司 Thermal Resistance Parameter Thermal resistance, junction - case. Max Thermal resistance, junction - ambient. Max SJMOS N-MOSFET 650V, 67.75mΩ,...