CRJQ80N65F
CRJQ80N65F is 650V SJMOS N-MOSFET manufactured by CRM.
Features
- CRM(CQ) Super_Junction technology
- Much lower Ron- A performance for On-state efficiency
- Better efficiency due to very low FOM
- Ultra-fast body diode
- Qualified for industrial grade applications according to JEDEC
Product Summary
VDS RDS(on)_typ ID
650V 77mΩ 43A
Applications
- LED/LCD/PDP TV and monitor Lighting
- Solar/Renewable/UPS-Micro Inverter System
- On-Board battery Chargers
- Power Supply
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part # CRJQ80N65F
Marking
Package
CRJQ80N65F TO-247-3L
Packing Tube
Reel Size N/A
Absolute Maximum Ratings(at Tj = 25 °C, unless otherwise specified)
Parameter
Drain-source voltage Continuous drain current 1) TC = 25°C TC = 100°C Pulsed drain current 2) (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30m H)
MOSFET dv/dt ruggedness
Gate-Source voltage Power dissipation (TC = 25°C) Continuous diode forward current(TC = 25°C) Diode pulse current 2) (TC = 25°C) Recovery diode dv/dt 3) Maximum diode mutation speed
Operating junction and storage temperature
Symbol VDS
ID pulse EAS dv/dt VGS Ptot IS
IS pulse dv/dt di F/dt Tj , T stg
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
Tape Width N/A
Qty 25/30pcs
Value 650
43 32.3 172 750
50 ±30 470 43 172 50 900 -55...+150
Unit...