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Silicon N-Channel Power MOSFET CRJS065N60G3F-G
General Description：
CRJS065N60G3F-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-263, which accords with the RoHS standard.
VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V
Features：
Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free Zener-Protected
600
V
40
A
187
W
50
mΩ
8.5
uJ
Applications：
Power switch circuit of adaptor, charger and LED.
CRJS065N60G3F-G Datasheet
