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CRMB0301C - 30V Complementary Power MOSFET

Features

  • Uses CRM(CQ) advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Complementary N-ch and P-ch MOSFET.

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Datasheet preview – CRMB0301C

Datasheet Details

Part number CRMB0301C
Manufacturer CR Micro
File Size 1.25 MB
Description 30V Complementary Power MOSFET
Datasheet download datasheet CRMB0301C Datasheet
Additional preview pages of the CRMB0301C datasheet.

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Full PDF Text Transcription

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch and P-ch MOSFET Applications • Motor drive CRMB0301C 30V Complementary Power MOSFET Product Summary Symbol N-Ch VDS 30V RDS(on) typ. 15mΩ ID 15A P-Ch -30V 22mΩ -15A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking Package CRMB0301C B0301C PDFN3.3x3.3D Packing Reel Size Taping N/A Tape Width N/A Qty 5000pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) Continuous drain current TC = 25°C (Package limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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