CRSM058N08N3 Datasheet | CR Micro

Features - Uses CRM(CQ) advanced Sky MOS3 technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - Qualified according to JEDEC criteria Applications - Synchronous Rectification for Converters - Battery management - UPS (Uninterrupible Power Supplies) Sky MOS3 N-MOSFET 80V, 4.8mΩ, 60A Product Summary 80V RDS(on) 4.8mΩ 60A 100% Avalanche Tested 100% DVDS Tested Package Marking and Ordering Information Part # CRSM058N08N3 Marking 058N08N3 Package Packing DFN5X6 Rib Tape&Reel Reel Size N/A Tape Width N/A Qty 5000pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H, Rg=25Ω)[1] Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature ※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5m H, IAS = 21A, Vgs=10V. Symbol VDS ID pulse EAS VGS Ptot Tj , T stg Value 80 80 60 51 240 110 ±20 66 -55...+150 Unit V A m J V W °C Rev 1.0 ©China Resources Microelectronics (Chongqing)...