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CRSQ155N20N3 - SkyMOS3 N-MOSFET

Key Features

  • Uses CRM(CQ) advanced SkyMOS3 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number CRSQ155N20N3
Manufacturer CR Micro
File Size 495.43 KB
Description SkyMOS3 N-MOSFET
Datasheet download datasheet CRSQ155N20N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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() CRSQ155N20N3 SkyMOS3 N-MOSFET 200V, 13mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 200V RDS(on) 13mΩ ID 80A 100% Avalanche Tested 100% DVDS Tested CRSQ155N20N3 Package Marking and Ordering Information MARKING CRSQ155N20N3 Package TO-247 Packing Tube Reel Size N/A Tape Width N/A Qty 30pcs Absolute Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) VDS ID ID pulse