CRTD019N03L2-G - Silicon N-Channel Power MOSFET

Product Overview

CR Micro

Datasheet Details

Part number	CRTD019N03L2-G
Manufacturer	CR Micro
File Size	686.03 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CRTD019N03L2-G Datasheet
Additional preview pages of the CRTD019N03L2-G datasheet.

Product details

Description

CRTD019N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤1.8mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

📁 Similar Datasheet

CRTD360N10LZ - Trench N-MOSFET (CRM)
CRTD370P10L - Trench P-MOSFET (CRM)
CRT-40 - Latching SPDT Coaxial Switch (Teledyne)
CRT0402 - Thin Film Precision Chip Resistors (BOURNS)
CRT0402-AS - Sulfur-Resistant Thin Film Precision Chip Resistors (BOURNS)
CRT0402-ST - Thin Film Precision Chip Resistors (BOURNS)
CRT0402A - Thin Film Precision Chip Resistors (BOURNS)
CRT0603 - Thin Film Precision Chip Resistors (BOURNS)

Other Datasheets by CR Micro

CRTD028N03L2-G - Silicon N-Channel Power MOSFET
CRTD028N04L2-G - Silicon N-Channel Power MOSFET
CRTD030N03L - 30V Trench N-MOSFET
CRTD030N04L - 40V Trench N-MOSFET
CRTD032N03L2P - Silicon N-Channel Power MOSFET
CRTD034N04L2-G - Silicon N-Channel Power MOSFET

Published: Dec 8, 2024 |