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CRTD028N04L2-G
General Description：
CRTD028N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can
VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ
40 210 60 166.6 1.9
V A A W mΩ
be used in load switch and power switch applications. The package
form is TO-252, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤2.5mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
load switch and power switch applications.
CRTD028N04L2-G Datasheet
