Datasheet Details
| Part number | CRTD080N02U2-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.22 MB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CRTD080N02U2-G Download (PDF) |
|
|
| Part number | CRTD080N02U2-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.22 MB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CRTD080N02U2-G Download (PDF) |
|
|
|
： CRTD080N02U2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 20 60 25 32.8 6.0 V A A W mΩ suitable for use as a load switch and PWM applications.
The package form is TO-252, which accords with the RoHS standard.
Silicon N-Channel Power MOSFET CRTD080N02U2-G General.
| Part Number | Description |
|---|---|
| CRTD080N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD080P04L2P | Silicon N-Channel Power MOSFET |
| CRTD084N08N | Trench N-MOSFET |
| CRTD085N06N2-G | Trench N-MOSFET |
| CRTD019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD030N03L | 30V Trench N-MOSFET |
| CRTD030N04L | 40V Trench N-MOSFET |
| CRTD032N03L2P | Silicon N-Channel Power MOSFET |