Click to expand full text
Silicon N-Channel Power MOSFET CRTD080N02U2-G
General Description：
CRTD080N02U2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ
20 60 25 32.8 6.0
V A A W mΩ
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤7.0 mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of adaptor and charger.
CRTD080N02U2-G Datasheet
